power matters. power portfolio 2012-2013 power semiconductors power modules rf power mosfets
coolmos comprise a new family of transistors developed by in?neon technologies ag. coolmos is a trademark of in?neon technologies ag aspm?, power mos v?, power mos 7? & t-max? are registered trademarks of microsemi corporation about microsemi microsemi corporation (nasdaq: mscc) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, fpgas, socs and asics; power management products; timing and voice processing devices; rf solutions; discrete components; security technologies and scalable anti-tamper products; power-over-ethernet ics and midspans; as well as custom design capabilities and services. microsemi is headquartered in aliso viejo, calif., and has approximately 3,000 employees globally. learn more at www.microsemi.com. contents high voltage smps transistors page no. igbts (insulated gate bipolar transistors) ......................................................................3-5 power mos 8 tm mosfets / fredfets ............................................................................6-8 ultra low gate charge mosfets ...................................................................................... 9 coolmos tm mosfets..................................................................................................... 10 high voltage linear mosfets ......................................................................................... 10 diodes sic schottky and ultra fast recovery diodes ............................................................11-13 high voltage rf mosfets ........................................................................................ 14 driver-rf mosfet hybrids ...................................................................................... 14 high frequency rf mosfets .................................................................................. 15 reference design kit .............................................................................................. 15 power modules contents ...................................................................................................................... .... 16 electrical con?guration ................................................................................................... 17 packaging ..................................................................................................................... ... 18 know how and capabilities .......................................................................................19-20 part numbering system ................................................................................................... 21 igbts (insulated gate bipolar transistors) ................................................................22-26 mosfets ....................................................................................................................27- 31 renewable energy power modules ............................................................................31-32 sic power modules.....................................................................................................33-35 diodes and recti?ers .................................................................................................36-38 package outline drawings .............................................................................. 39-43
3 insulated gate bipolar transistors (igbts) 10 20 30 40 50 60 70 80 90 100 110 120 igbt switching frequency ranges (khz, hard switched) 600v 1200v 900v thunderbolt ? npt thunderbolt ? npt thunderbolt ? high speed (hs) npt fast npt standard series voltage ratings (v) technology easy to parallel short circuit soa comment thunderbolt? 600, 1200 npt x x general purpose, high speed thundebolt? high speed 600 npt x x highest speed fast 1200 npt x x general purpose, medium speed mos 7? 1200 pt ultra-low gate charge mos 8? 600, 900, 1200 pt, npt highest ef?ciency field stop trench gate 600, 1200 field stop x x lowest conduction loss power mos 8 tm pt power mos 8 tm pt field stop field stop igbts from microsemi igbt products from microsemi provide high quality solutions for a wide range of high voltage, high power applications. the swi tching frequency range spans from dc for minimal conduction loss to over 100khz for very high power density smps applications. the fr e- quency range for each product type is shown in the graph below. each igbt product represents the latest in igbt technology, pr oviding the best possible performance/cost combination for the targeted application. there are six product series that utilize three d ifferent igbt technologies: non-punch-through (npt), punch-through (pt) and field stop. product options all standard igbt products are available as a single igbt or as a combi product packaged with an anti-parallel dq series diode. package options include to-220, to-247, t-max ? , to-264, and sot-227. customized products are available; contact factory for details. power mos 7 tm pt power mos 8 tm npt (new!) note: frequency ranges shown are typical for a 50a igbt. refer to product data sheet max frequency vs current graph for more informa tion.
4 2.5 25 25 21 apt25gr120b to-247 2.5 25 25 21 apt25gr120s d 3 2.5 40 38 28 apt40gr120b to-247 2.5 40 38 28 apt40gr120s d 3 2.5 50 48 36 apt50gr120b2 t-max ? 2.5 50 48 36 apt50gr120l to-264 1200 2.5 70 66 42 apt70gr120b2 t-max ? 2.5 70 66 42 apt70gr120l to-264 2.5 70 42 30 apt70gr120j isotop ? 2.5 85 72 46 apt85gr120b2 t-max ? 2.5 85 72 46 apt85gr120l to-264 2.5 85* 46 31 apt85gr120j isotop ? 2.5 25 25 21 apt25gr120bd15 to-247 (dq) 2.5 25 25 21 apt25gr120sd15 d3 (dq) 2.5 25 25 21 apt25gr120bscd10 to-247 (sic sbd) 2.5 25 25 21 apt25gr120sscd10 d3 (sic sbd) 1200 2.5 40 38 28 apt40gr120b2d30 t-max ? (dq) 2.5 40 38 28 apt40gr120b2scd10 t-max ? (sic sbd) 2.5 50* 42 32 apt50gr120jd30 isotop ? (dq) 2.5 70* 42 30 apt70gr120jd60 isotop ? (dq) 2.5 85* 46 31 apt85gr120jd60 isotop ? (dq) 2.0 36 21 17 apt36ga60b to-247 2.0 44 26 20 apt44ga60b to-247 600 2.0 54 30 23 apt54ga60b to-247 2.0 68 35 27 apt68ga60b to-247 2.0 80 40 31 apt80ga60b to-247 2.0 102 51 39 apt102ga60b2 t-max ? or to-264 2.5 35 17 10 apt35ga90b to-247 900 2.5 43 21 13 apt43ga90b to-247 2.5 64 29 19 apt64ga90b to-247 2.5 80 34 23 apt80ga90b to-247 or d 3 2.0 36 21 17 apt36ga60bd15 to-247 2.0 44 26 20 apt44ga60bd30 to-247 600 2.0 54 30 23 apt54ga60bd30 to-247 2.0 60 48 36 apt60ga60jd60 isotop ? 2.0 68 35 27 apt68ga60b2d40 t-max ? or to-264 2.0 80 40 31 apt80ga60ld40 to-264 2.5 27 14 8 apt27ga90bd15 to-247 2.5 35 17 10 apt35ga90bd15 to-247 900 2.5 43 21 13 apt43ga90bd30 to-247 2.5 46 33 21 apt46ga90jd40 isotop ? 2.5 64 29 19 apt64ga90b2d30 t-max ? or to-264 2.5 80 34 23 apt80ga90ld40 to-264 1.5 24 15 10 apt20gn60bg to-247 1.5 37 20 14 apt30gn60bg to-247 1.5 64 30 21 apt50gn60bg to-247 1.5 93 42 30 apt75gn60bg to-247 600 1.5 123 75 47 apt150gn60j isotop ? 1.5 135 54 39 apt100gn60b2g t-max ? 1.5 190 79 57 apt150gn60b2g t-max ? 1.5 230 103 75 apt200gn60b2g t-max ? 1.5 158 100 66 apt200gn60j isotop ? 1.7 33 19 13 apt25gn120bg to-247 or d 3 1.7 46 24 17 apt35gn120bg to-247 1.7 66 32 22 apt50gn120b2g t-max ? 1200 1.7 70 44 27 apt100gn120j isotop ? 1.7 99 45 30 apt75gn120b2g t-max ? or to-264 1.7 120 58 38 apt100gn120b2g t-max ? 1.7 99 60 36 apt150gn120j isotop ? datasheets available on www.microsemi.com all products rohs co mpliant bv ces v ce(on) i c2 maximum i c package volts typ 25 o c 100 o c at frequency part number style to-247[b] isotop ? [j] sot-227 t-max?[b2] c e g d 3 pak[s] to-264[l] 264-max tm [l2] s 0 4 4 e c h n o l o g y s & |